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Description   Complementary Enhancement Mode Field Effect Transistor   Features n-channel p-channel VDS (V) = 30V -30V ID = 6.9A (VGS=10V) -6A (VGS=-10V) RDS(ON) RDS(ON) < 28mÙ (VGS=10V) < 35m Ù (VGS = -10V) < 42mÙ (VGS=4.5V) < 58m Ù (VGS = -4.5V)

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